Terminology » RF Components » VMOS FET vs UMOS FET: Key Differences Explained

VMOS FET vs UMOS FET: Key Differences Explained

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This page highlights the key differences between VMOS FET and UMOS FET. Below, you’ll find a detailed comparison of these two types of power MOSFETs.

VMOS FET

The full name of VMOS FET is Vertical Metal Oxide Silicon FET. In this type of power MOSFET, the gate is cut in a V-shape vertically into the substrate.

VMOS FETs are known for delivering high current from the Source (S) terminal to the Drain (D) terminal. This is mainly due to the wide depletion region width.

VMOS FET vs UMOS FET Image: VMOS FET vs UMOS FET

UMOS FET

UMOS FETs are named for their U-shaped structure. They are also known as Trench Gate MOS.

This device exhibits a low maximum electric field on top of the gate, which translates to a higher maximum voltage capability compared to VMOS FET devices.

Advantages of CMOS Process

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Depletion MOSFET vs. Enhancement MOSFET: Differences Explained

Depletion MOSFET vs. Enhancement MOSFET: Differences Explained

Explore the key differences between Depletion and Enhancement MOSFETs, including conduction at 0V, cut-off voltage, leakage currents, and logic operations. Learn about their construction, characteristics, and applications.

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