Terminology » RF Components » JFET vs MOSFET vs MESFET: Key Differences Explained

JFET vs MOSFET vs MESFET: Key Differences Explained

transistor mosfet jfet mesfet semiconductor

This article breaks down the key differences between JFETs, MOSFETs, and MESFETs. We’ll explore their internal structures and characteristics to understand their respective strengths and applications.

JFET (Junction Field-Effect Transistor)

JFET structure

Figure 1 illustrates the internal structure of a JFET. Let’s dive into its defining features:

  • The gate voltage controls the channel conductance by modulating the width of the depletion region at the p-n junction. Think of it like squeezing a pipe to control water flow.
  • The p-region is doped much higher than the n-region. This causes the depletion region to expand mostly into the n-channel, allowing for efficient control.
  • For a p-channel JFET, the n-type layer will be doped higher than the p-channel.

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)

MOSFET structure

Figure 2 depicts the internal structure of a MOSFET. Here’s what makes them unique:

  • Gate control is achieved through a MOS (Metal-Oxide-Semiconductor) barrier. This insulation allows for very high input impedance.
  • The device is typically “normally-off.” Current only flows when the gate bias inverts the channel, creating a conductive path.
  • Both p-channel and n-channel MOSFETs are possible, leading to the powerful CMOS (Complementary MOS) technology.
  • MOSFETs typically have cutoff frequencies less than 1 GHz.
  • Main Application: Integrated circuits. Microwave operation isn’t generally possible.

MESFET (Metal-Semiconductor Field-Effect Transistor)

MESFET structure

Figure 3 shows the internal structure of a MESFET. These devices have some distinct advantages for high-frequency applications:

  • Gate control is achieved through a Schottky barrier.
  • The device is typically “normally-on.” A negative gate-bias is needed to cut the current off (in the case of an n-channel MESFET).
  • Typically, n-channel MESFETs are feasible.
  • MESFETs typically have cutoff frequencies greater than 10 GHz.
  • Main Application: Microwave devices. Integration isn’t as high as with CMOS devices.