GaN vs. LDMOS: Advantages and Differences

This page outlines the advantages of GaN (Gallium Nitride) and LDMOS (Laterally Diffused MOS) technologies. These benefits have fueled their widespread adoption in RF and Microwave products.

Benefits of GaN | Advantages of GaN

Here’s a look at the key advantages of using GaN:

• High-Frequency Performance: Performs exceptionally well above 2.5 GHz.
• 5G Applications: Ideal for use in cutting-edge 5G wireless devices.
• Broadband Design: Well-suited for broadband-based design applications.
• High Efficiency: Achieves impressive efficiency, even at high frequencies.
• Thermal Considerations: Offers a comparable thermal package to LDMOS.
• Compact Power Amplifiers: Enables the design of compact Power Amplifiers (PAs), delivering more power in a smaller package with smaller matching circuitry. This is a huge advantage when space is at a premium.
• Wideband Applications: Used effectively in wideband CW (Continuous Wave) and pulse PA applications. For example, consider applications from 200 to 2600 MHz at 100 Watts, or 2.7 to 3.5 GHz at 700 Watts.

Benefits of LDMOS | Advantages of LDMOS

Let’s explore the advantages of LDMOS technology:

• Good Performance up to 2.7 GHz: Performs well up to 2.7 GHz.
• Cost-Effective Power Amplifiers: Provides cost-effective solutions for Power Amplifiers.
• High Ruggedness: Delivers highly rugged devices with good VSWR (Voltage Standing Wave Ratio). This means they are less susceptible to damage from reflected power.
• Consistent Thermal Behavior: Offers consistent and predictable thermal behavior.
• Below 1 GHz Broadband: Excellent for broadband applications below 1 GHz.
• High Power at Lower Frequencies: Delivers the highest power output up to 1.5 GHz.
• Narrowband PA Applications: Frequently used in narrowband PA applications such as:
  • Cellular bands (up to 2.7 GHz)
  • Avionics and L-Band (1.2-1.4 GHz up to 1.5 KWatt)
  • S-band (2.7 to 3.1 GHz) at 300 Watt