RFGaN vs GaAs: A Comprehensive Comparison of Key Differences
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gaas
semiconductor
power amplifier
material comparison
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This article compares Gallium Nitride (GaN) and Gallium Arsenide (GaAs) materials, highlighting their key differences and performance characteristics, particularly in power amplifier applications.
GaN vs GaAs: Material Comparison
The following table summarizes the differences between GaN and GaAs.
| Parameter | GaN | GaAs |
|---|---|---|
| Full form | Gallium Nitride | Gallium Arsenide |
| Power Density (Output) | 4 to 8 Wattt/mm | 0.5 to 1.5 Watt/mm |
| Operating Voltage | 28 to 48 Volt | 5 to 20 Volt |
| Breakdown voltage | > 100 Volt | 20 to 40 Volt |
| Current (Maximum) | About 1 Ampere/mm | About 0.5 Ampere/mm |
| Thermal Conductivity | 390 (z), 490 (SiC) | 47 |
| Radiation Resistant performance | Better | Lesser |
Key Takeaways from the Comparison:
- Higher Breakdown Voltage & Power Density: GaN boasts significantly higher breakdown voltage and power densities than GaAs and Silicon (Si). This makes it suitable for high-power applications.
- Superior Radiation Resistance: GaN exhibits better radiation resistance compared to GaAs. This makes it a preferred choice for use in space applications where exposure to radiation is high.
- Ideal for Smaller Devices: Due to its high power densities, GaN is well-suited for creating smaller devices, thanks to the reduction in capacitance value.
- Wider Bandwidths and High Impedances: GaN allows for achieving high impedances and wider bandwidths in circuit designs.
- Smaller Size and Lower Cost (Potential): Using GaN can lead to smaller device sizes, potentially reducing overall costs.
- Reduced Cooling & Lighter Weight: GaN-based devices typically require less cooling and are generally lighter in weight compared to their GaAs counterparts.
GaN Power Amplifier vs GaAs Power Amplifier
This section delves into the performance differences between GaN and GaAs power amplifiers.
| Parameter | GaN Power Amplifier | GaAs Power Amplifier |
|---|---|---|
| Spectral Regrowth for 400W SSPA Ku band frequency for operating power of 55 dBm | -30.3 dBc | -28.6 dBc |
| TOI (Third Order Intermodulation) with operating power of 52 dBm | -31.63 dBc | -27.50 dBc |
| AM/PM Conversion | 1.5 o /dB (at 55dBm operating power), 0.5 o /dB (at 52dBm operating power) | 2.5 o /dB (at 55dBm operating power), 1.0 o /dB (at 52dBm operating power) |
| Weight | 30KG | 80KG |
| Volume | 29 dm 3 | 142 dm 3 |
| Energy consumption | 2200 Watt | 3500 Watt |
Key Takeaways from the Power Amplifier Comparison (Based on Advantech Wireless Inc. Research):
- Improved Spectral Regrowth: GaN power amplifiers (SSPA) show about 2dB better performance than GaAs power amplifiers (400W SSPA Ku band).
- Better TOI Performance: The Third Order Intermodulation (TOI) performance of GaN is approximately 1 dB better than a GaAs SSPA with the same specifications.
- Reduced AM/PM Distortion: GaN power amplifiers exhibit less AM/PM conversion, meaning less distortion compared to GaAs power amplifiers.
- Weight, Size & Energy Efficiency: GaN power amplifiers are significantly better in terms of weight, volume (size), and energy consumption when compared to GaAs power amplifiers.
