RFTop Tunnel Diode Manufacturers for High-Frequency Applications
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Tunnel diodes are indispensable components in a variety of high-frequency applications, including microwave systems and radar technology. With the ever-growing demand for faster and more efficient electronics, tunnel diode manufacturers are concentrating on delivering components that provide outstanding performance even in challenging environments. This guide highlights some of the leading manufacturers offering top-tier solutions for high-frequency systems, including M-Pulse Microwave, MACOM, American Microsemiconductor, Texas Instruments, and General Electric.
What is a Tunnel Diode?
A tunnel diode is a type of semiconductor diode that exhibits negative resistance due to a quantum mechanical effect known as the tunneling effect.
Figure 1: Tunnel Diode Equivalent Circuit
Figure 2: Tunnel Diode Characteristic and Symbol
As shown in Figure 2, the current decreases as the voltage increases within a specific region. This results in the characteristic negative resistance curve.
Tunnel diodes find use in various applications such as oscillators, amplifiers, and one-shot multivibrators. The following specifications and parameters are typically considered when selecting a tunnel diode:
- Peak current (maximum) in the tunneling (negative resistance) region.
- Valley current (minimum) in the tunneling region.
- Maximum reverse voltage.
- Forward voltage (resulting from current flow in the forward direction).
- Maximum permissible power dissipation.
- Terminal capacitance (measured at a specified reverse voltage and frequency).
- Junction operating temperature.
- Package type.
Tunnel Diode Manufacturers
The following table provides a comparison of tunnel diode manufacturers, their part numbers, and technical features:
| Tunnel Diode Manufacturers | Description |
|---|---|
| M-Pulse Microwave Inc., San Jose, CA, USA | • Part Numbers: MP Series (e.g., MP1101, MP1201, MP1301, MP1451, MP1601) • Specifications of MP1601: Ip range (µA): 450 to 600, Iv (max. in µA): 225, Vr in mV (typ.) at Ir = 500 µA: 425, Vf in mV (max.) at If = 3 mA: 115, Ct (max.) in pF: 0.2 • Website: mpulsemw.com |
| MACOM | • Part number: MBD series (Aeroflex Metelics) • Features: Zero bias operation, excellent temperature stability, Low video impedance, etc. • Fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110°C. • MACOM acquired Aeroflex’s diode business from Cobham. • Website: https://www.macom.com/ |
| American Microsemiconductor, Inc., New Jersey, USA | • Part number: 1N3712 (Peak point current, (mA): 1.0 +/- 10 %, Valley point current, (mA): 0.18, Capacitance, C (pF): 10, Peak Point Voltage, (mV): 65, Valley voltage, (mV): 350, Forward Peak voltage, (mV): 500, Series resistance, (Ohms): 4.0, Negative conductance, -G: 8, Resist. cutoff frequency, : 2.3 • Other parts: TD series (ultra high speed switching tunnel diodes) • Email: rfq@americanmicrosemi.com • Website: https://www.americanmicrosemi.com/ |
| Texas Instruments | • Part number: IN650 series • Manufactured using gallium arsenide material. |
| General Electric | • Part Number: 1N3712/TD-1 |
Conclusion
Collaborating with leading tunnel diode manufacturers ensures high-quality components for your high-frequency applications. Whether you’re developing microwave systems, radar technologies, or other advanced electronics, these manufacturers offer reliable, cutting-edge solutions to meet the demands of modern technology.
