Schottky Diode vs. P-N Diode: Key Differences Explained

schottky diode
p-n diode
diode
semiconductor
rectifier

This article compares Schottky diodes and p-n diodes, highlighting the fundamental differences between them. We’ll explore their symbols, structures, circuits, and characteristic curves.

P-N Diode

A p-n junction is the metallurgical boundary formed between the n-type and p-type regions within a semiconductor crystal. It consists of these two semiconductor regions with opposite doping types. These junctions exhibit significant rectifying behavior, leading to the creation of p-n diodes.

p-n diode symbol Figure 1: P-N Diode Symbol

Figure 1 illustrates the standard symbol for a p-n diode.

p-n diode structure Figure 2: P-N Diode Structure

Figure 2 shows the structure of a typical p-n junction diode. As depicted, a p-n diode comprises a p-n junction with one connection to the p-side (anode) and another to the n-side (cathode).

p-n diode characteristic Figure 3: P-N Diode Characteristic

Figure 3 presents the characteristic curves for silicon and germanium diodes at 25°C. P-n diodes are commonly used as rectifiers in power supplies to convert AC to DC.

Silicon is generally preferred over germanium due to its superior properties:

  • Much lower reverse current.
  • Higher breakdown voltage.
  • Ability to operate at higher temperatures.

Schottky Diode

schottky diode symbol Figure 4: Schottky Diode Symbol

Figure 4 illustrates the symbol for a Schottky diode.

schottky diode and equivalent circuit Figure 5: Schottky Diode Structure and Circuit

In a Schottky diode, a metal-semiconductor junction is formed at one end, and another metal-semiconductor contact is made at the other. As shown in Figure 5, Schottky diodes use metals like tungsten, aluminum, chromium, platinum, or gold, and typically employ N-type silicon as the semiconductor material.

schottky diode characteristic Figure 6: Schottky Diode Characteristic

Figure 6 shows the characteristic curve of a Schottky diode. The V-I curve is steeper compared to a standard p-n diode. Notably, Schottky diodes exhibit a lower forward voltage drop than p-n diodes.

Key Differences: Schottky Diode vs. P-N Diode

FeatureSchottky DiodeP-N Diode
Forward CurrentOccurs due to thermionic emission (majority carrier transport).Occurs due to diffusion currents (minority carrier transport).
Reverse CurrentGenerated only due to majority carriers overcoming the barrier (less temperature-dependent).Generated due to minority carriers diffusing to the depletion layer and drifting to the other side (more temperature-dependent).
Cut-in VoltageSmall (about 0.3V).Large (about 0.7V).
SpeedHigh switching speed due to majority carrier transport; no recombination time needed.Limited by the recombination time of injected minority carriers.
Ideality FactorApproximately 1 due to no recombination in the depletion layer.Approximately 1.2 to 2.0 due to recombination in the depletion layer.
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