HEMT Drain Current Calculator and Formula

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drain current
hemt
electronic component
mobility transistor

This page provides a HEMT (High Electron Mobility Transistor) drain current calculator and explains the HEMT drain current formula.

HEMT Drain Current Formula

Inputs

Outputs

Here’s the formula used to calculate the drain current:

HEMT drain current formula

Where:

  • Ids = HEMT Drain Current
  • q = Electron charge = 1.6 x 10-19 Coulombs
  • n(z) = Concentration of two-dimensional electron gas (electrons/m2)
  • W = Gate Width (meters)
  • v(z) = Electron velocity (m/s)

Example Calculation

Let’s say we have the following inputs:

  • N(z) = 5.21E15 (5.21 x 1015 electrons/m2)
  • W = 150 µm (150 x 10-6 meters)
  • V(z) = 2E5 (2 x 105 m/s)

Using the formula, the calculated drain current (Ids) would be approximately 25 mA.

HBT vs HEMT: Key Differences Explained

HBT vs HEMT: Key Differences Explained

Explore the differences between HBT (Heterojunction Bipolar Transistor) and HEMT (High Electron Mobility Transistor), including construction, materials, performance, and applications.

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hbt
hemt