LDMOS Transistors: Advantages and Disadvantages

This page explores the pros and cons of LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors. It highlights the benefits and drawbacks of LDMOS technology, along with a brief introduction to its structure.

What is LDMOS and its Structure?

Introduction:

In the realm of RF/Microwave applications, two primary types of power MOSFETs are commonly used: DMOS and LDMOS. Each possesses a unique structure and employs distinct semiconductor processes. These devices are manufactured in both NMOS (n-type MOSFET) and PMOS (p-type MOSFET) variants.

LDMOS structure

LDMOS is primarily a lateral, surface-effect device. The channel current in an LDMOS is controlled by the vertical electric field (E), induced by the gate, and the lateral field existing between the Source (S) and Drain (D).

In LDMOS devices, the channel is defined by three key parameters: gate length, drain diffusion, and source diffusion. Figure 1 (shown above) illustrates a cross-sectional view of the LDMOS structure.

Benefits or Advantages of LDMOS

Here are the main advantages of using LDMOS transistors:

• High-Frequency Operation: Operates effectively up to 2.2 GHz, making it suitable for cost-effective Power Amplifier solutions.
• Linear Amplification: Demonstrates excellent performance in class-AB operation, enabling the design of linear amplifiers with higher gain and improved efficiency.
• Ruggedness: Delivers highly robust devices with good VSWR (Voltage Standing Wave Ratio).
• Thermal Stability: Exhibits consistent thermal behavior.
• Broadband Applications: Well-suited for broadband applications below 1 GHz.
• High Power Delivery: Capable of delivering high power outputs up to 1.5 GHz.
• High PAPR Capability: Ideal for systems (CDMA, WCDMA) requiring higher crest factors due to its high PAPR (Peak-to-Average Power Ratio) capability.

Drawbacks or Disadvantages of LDMOS

Despite its advantages, LDMOS also has some drawbacks:

• Current Drift: Current drift due to elevated temperature can be a concern. This issue is being addressed in newer generations of LDMOS devices.
• Reliability Concerns: Layout and packaging, in conjunction with gold top metallization and gold bonding wires (a well-established practice for RF power semiconductors), are critical factors in ensuring the long-term reliability of the device, and consequently, the RF power amplifier and basestation.
• Critical Design Factors: To ensure long-term reliability, careful attention must be paid to layout, packaging, and the use of gold top metallization in LDMOS device design.