RFGunn vs Impatt vs Trapatt vs Baritt Diodes: A Comparison
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This article compares Gunn diodes, Impatt diodes, Trapatt diodes, and Baritt diodes, highlighting the key differences between these semiconductor devices.
Specifications Comparison
The following table summarizes the key specifications and characteristics of each diode type:
| Specifications | Gunn diode | Impatt diode | Trapatt diode | Baritt diode |
|---|---|---|---|---|
| Bandwidth | 2% of RF center frequency | 1/10th of RF center frequency - Narrow | - | - |
| Operating Frequency | 1 to 100 GHz | 0.5 to 100 GHz | 1 to 10 GHz | 4 to 8 GHz |
| Efficiency | - | 3% in CW, 60% in pulsed mode | 20 to 60% pulsed mode | Low (about 2%) |
| Output Power | Few watts (continuous wave), 100 to 200 Watts (pulsed) | 1 Watt (CW), 400 Watts (Pulsed) | Several 100 Watts (pulsed) | Low (mWatt) |
| Noise Figure | - | High, 30 dB | High, 60 dB | Less noisy than IMPATT diode (<15dB) |
| Basic Semiconductors | GaAs, InP | Si, Ge, GaAs, InP | Si | Si, metal |
| Construction | n+nn+ GaAs single crystal | n+pip+ reverse bias p-n junction | p+nn++ or n+pp+ reverse bias p-n junction | p-n-p or p-n-i-p, or p-n metal or metal-n-metal forward bias p-n junction |
| Harmonics | - | Less Strong | Less | - |
| Ruggedness | Yes | Yes | Yes | Yes |
| Size | Small | Small | Small | Small |
| Application | Oscillator | Amplifier, Oscillator | Oscillator | Local Oscillator |
Gunn Diode
Gunn diodes are known for their ability to generate microwave signals. They are primarily used in oscillators due to their relatively simple operation.
Impatt Diode
Impatt diodes are high-power devices often used in amplifiers and oscillators. They are characterized by a high noise figure.
Trapatt Diode
Trapatt diodes are also used in oscillators and are capable of generating high pulsed power.
Baritt Diode
Baritt diodes are typically employed as local oscillators, offering lower noise performance compared to Impatt diodes, but at the cost of lower output power.
